features dual npn digital transis tor absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo 50 v collector-emit ter voltage v ceo 50 v em itt er-b ase voltage v ebo 5 v collector current i c 100 m a pow er dissi pation(to tal) p d 300 m w oper ating and storage and tem pera ture rang e t j , t stg -55 to +150 ele ctric al characteristics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit collector-base breakdow n voltage v (br)cbo 50 v collector-em itt er breakdow n voltage v (br)ceo 50 v em itt er- base b reakdow n voltage v (br)ebo 5 v collector cut off current i cbo v cb =50v, i e =0 0.5 a em itt er cutoff c urr ent i ebo v eb = 4v, i c =0 0.5 a dc curre nt gain h fe v ce =5v, i c =1m a 100 250 600 collector-emit ter sat uration vo ltage v ce(sat) i c = 5 m a; i b = 0.25 m a 0.3 v transition frequency f t v ce =10v, i e = -5m a , f=100mh z 250 mh z input resis tance r 1 3.29 4.7 6.11 k mark ing mar king g3 1 23 4 5 unit: mm r 1 r 1 dtr 1 dtr 2 (4) (5) r 1 =4.7k ? (1) (2) (3) i c = 50 a, i e = 0 i c = 1 m a, i b = 0 i c = 50 a, i c = 0 sales@twtysemi.com 1of 2 http://www.twtysemi.com s m d ty p e i c s m d ty p e t r a n s i s t o r s FMG3A s m d ty p e t r a n s i s t o r s smd type ic smd type transistors product specification 4008-318-123
s m d ty p e i c s m d ty p e t r a n s i s t o r s FMG3A t y pical ch aracteristics dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 ta=100?c 25?c ? 40?c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce (sat) ( v) collector current : i c (a) ta=100?c 25?c ? 40?c l c /l b =20 fig.2 collector-emitter saturation voltage vs. collector current sales@twtysemi.com 2 of 2 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s smd type ic smd type transistors product specification 4008-318-123
|
